2n6674 2n6675 npn silicon power transistor description: the central semiconductor 2n6674, 2n6675 types are npn silicon triple diffused mesa power transistors designed for high voltage switching applications. marking: full part number maximum ratings: (t c =25c) symbol 2n6674 2n6675 units collector-emitter voltage v cev 450 650 v collector-emitter voltage v ceo 300 400 v emitter-base voltage v ebo 7.0 v continuous collector current i c 15 a peak collector current i cm 20 a continuous base current i b 5.0 a power dissipation p d 175 w operating and storage junction temperature t j , t stg -65 to +200 c thermal resistance jc 1.0 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min max units i cev v ce =rated v cev , v be =1.5v 0.1 ma i cev v ce =rated v cev , v be =1.5v, t c =100c 1.0 ma i ebo v eb =7.0v 2.0 ma bv ceo i c =200ma (2n6674) 300 v bv ceo i c =200ma (2n6675) 400 v v ce(sat) i c =10a, i b =2.0a 1.0 v v ce(sat) i c =10a, i b =2.0a, t c =100c 2.0 v v ce(sat) i c =15a, i b =5.0a 5.0 v v be(sat) i c =10a, i b =2.0a 1.5 v h fe v ce =2.0v, i c =10a 8.0 20 i s/b v ce =30v, i c =5.9a 1.0 s i s/b v ce =100v, i c =250ma 1.0 s h fe v ce =10v, i c =1.0a, f=5.0mhz 3.0 10 f t v ce =10v, i c =1.0a, f=5.0mhz 15 50 mhz c ob v cb =10v, i e =0, f=100khz 150 500 pf to-3 case r1 (10-march 2011) www.centralsemi.com
electrical characteristics - continued: (t c =25c unless otherwise noted) symbol test conditions min max units t d * v eb =6.0v, i c =10a, i b =2.0a 0.1 s t r * v eb =6.0v, i c =10a, i b =2.0a 0.6 s t r * v eb =6.0v, i c =10a, i b =2.0a, t c =100c 1.0 s t s * v eb =6.0v, i c =10a, i b1 =i b2 =2.0a 2.5 s t s * v eb =6.0v, i c =10a, i b1 =i b2 =2.0a, t c =100c 4.0 s t f * v eb =6.0v, i c =10a, i b1 =i b2 =2.0a 0.5 s t f * v eb =6.0v, i c =10a, i b1 =i b2 =2.0a, t c =100c 1.0 s * vcc=135v, tp=20s 2n6674 2n6675 npn silicon power transistor to-3 case - mechanical outline lead code: 1) base 2) emitter case) collector marking: full part number www.centralsemi.com r1 (10-march 2011)
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